Overview

Our research focuses on epitaxial growth of wide bandgap semiconductors (III-Nitrides) using the technique of molecular beam epitaxy (MBE) to engineer optical, electronic, and magnetic properties at nanometer length scales. We are studying new types of quantum structures: quantum wells, quantum dots, two dimensional electron gases with applications in high efficiency lighting, lasers, telecommunications, optical storage, magnetic semiconductors and spintronics. Our optical characterization laboratory in the Materials Science and Engineering department allows optical absorption and luminescence spectroscopy from ultraviolet to infrared wavelengths and from ambient to cryogenic temperature.

Recent Publications

• X. Li, R. C. Myers, F. M. Mendoza, D. D. Awschalom, and N. Samarth. Polarized emission from twin microdisk photonic molecules. IEEE J. Quant. Electron. 45, 932 (2009) .
• Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs. S. Mack, R. C. Myers, J. T. Heron, A. C. Gossard, and D. D. Awschalom.  Appl. Phys. Lett. 92, 192502 (2008).
• Zero-field optical manipulation of magnetic ions in semiconductors. R. C. Myers, M. H. Mikkelsen, J.-M. Tang, A. C. Gossard, M. E. Flatt, and D. D. Awschalom. Nature Materials, 7, 203 (2008).

News

Welcome

Sept 2009 - Santino Carnevale, joined the group as a PhD student in Materials Science.

Welcome

July 2009 - Daniel Hoy, joined the group as a PhD student in physics coadvised by Prof. Johnston-Halperin.

Molecular Beam Epitaxy  system installed

May 2009 - the Nitride MBE system was delivered to OSU's MBE lab, Dreese Labs 095. See photo gallery .

Welcome

Jan 2009 - Jing Yang, who joined the group as a PhD student in MSE in January

Lab rennovations complete

Oct 2008 - in the optical characterization laboratory (MacQuigg 462). See photo gallery .