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Roberto MyersAssistant ProfessorPh.D., University of California, Santa Barbara, 2006 Tel. (614) 292-8439 Office: 278 Watts Hall
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Research interests:
Our research spans Materials Science, Electrical Engineering, and Physics, focusing on the epitaxial growth of wide bandgap semiconductors (III-nitrides) toward generating new types of quantum structures: quantum wells, quantum dots, two dimensional electron gases. These structures have applications in high efficiency solid state lighting, telecommunications, and optical storage. Growth is performed using the technique of molecular beam epitaxy (MBE), which allows atomic layer-by-layer growth of single crystals with optical and electronic properties being engineered at nanometer length scales. We are interested in the dynamics of charge carriers and their optical transitions within these structures measured using ultrafast pump-probe spectroscopy as well as photoluminescence from ambient to cryogenic temperature. Of critical importance to our research is the understanding and control (suppression) of crystallographic defect formation during growth and explore how these defects affect optical and electronic properties.
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